Comprehensive design study of the Si/TlBr semiconductor-based Compton camera for 478 keV prompt gamma-ray imaging in boron neutron capture therapy

Abstract Boron neutron capture therapy (BNCT) can selectively destroy tumor cells while minimizing damage to normal tissue through boron neutron capture reactions. Real-time determination and localization of the in vivo boron dose during treatment is a critical challenge in BNCT. A promising solution involves imaging the 478 keV prompt gamma rays emitted from these capture reactions. This study presents a comprehensive simulation-based design of a Si/TlBr semiconductor Compton camera system for 478 keV prompt gamma-ray imaging in clinical BNCT. The design process includes optimization of detector geometry using isotropic, monoenergetic 478 keV gamma-ray sources; development of neutron and photon shielding under therapeutic neutron beam irradiation of a head phantom; and evaluation of imaging performance under clinically relevant conditions with low in vivo 10 B concentrations. The results provide valuable insights to support the further development of Compton camera systems for BNCT applications.