Ultra‐High‐Speed Dilute Nitride Photodetectors on GaAs Substrate for 1310 nm Operation (Advanced Optical Materials 25/2025)
Dilute Nitride Photodetectors Dilute nitride photodetectors at 1310 nm wavelength fabricated using standard GaAs technology are reported that operate with low dark current and ultra-high speed, despite their very low carrier mobility compared to those on InP; achieved by embedding confined cloud of electrons, kept in quasi-equilibrium, that landscape the electric field, and respond collectively to the photoelectrons, circumventing transit time limitations. More details can be found in article 10.1002/adom.202500115 by Bahram Nabet and co-workers.
Authors
- Bahram Nabet (ORCID: https://orcid.org/0000-0001-9320-9388)
- F. Quaranta (ORCID: https://orcid.org/0000-0002-8773-1644)
- Marc Currie (ORCID: https://orcid.org/0000-0002-6139-6710)
- A. Cola (ORCID: https://orcid.org/0000-0002-8179-8565)
- Michel Francois
Institutions
- United States Naval Research Laboratory (US)
- Orasure Technologies (United States) (US)
- Optical Sciences (United States) (US)
- National Research Council (IT)
- Institute for Microelectronics and Microsystems (IT)
- Bethlehem Area School District (US)
- Drexel University (US)
Publication Details
- Journal
- Advanced Optical Materials
- Published
- 2025-09-01
- DOI
- https://doi.org/10.1002/adom.70255
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00