Optical-enhanced, self-powered UV photodetectors based on VO2/SiC heterojunction

The development of ultraviolet (UV) heterojunction photodetectors plays a critical role in a wide range of applications, including environmental monitoring, biomedical imaging, and secure communications. In this study, we present self-powered solar-blind UV photodetectors based on a vanadium dioxide (VO2)/silicon carbide (SiC) heterojunction. The integration of the narrow-bandgap VO2 film with the wide-bandgap SiC creates a Z-type heterojunction, which significantly enhances photocurrent due to the built-in electric field at the interface. Furthermore, a notable increase in photocurrent is achieved by the deposition of gold nanoparticles on the device's surface. This modification enhances the local electric field via the plasmonic effects, thereby further improving photocurrent. The synergistic effect of the plasmonic field enhancement effect and the built-in electric field of the heterojunction enhances the generation, separation, and transport efficiency of photogenerated carriers, ultimately resulting in a superior photocurrent response. The self-powered UV heterojunction photodetector offers a promising strategy for the advancement of SiC-based optoelectronic devices.

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Publication Details

Journal
Applied Physics Letters
Published
2025-09-01
DOI
https://doi.org/10.1063/5.0288685
Citations
2
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.85

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article

Optical-enhanced, self-powered UV photodetectors based on VO2/SiC heterojunction

Xingyu Liao, Min Gao, Kun Yao, Chang Lu et al.
2 citations
Applied Physics Letters
Ga2O3 and related materials
0.85
article

Optical-enhanced, self-powered UV photodetectors based on VO2/SiC heterojunction

Xingyu Liao, Min Gao, Kun Yao, Chang Lu, Jiaming Feng, Yuan Lin
article en
2 citations

Abstract

The development of ultraviolet (UV) heterojunction photodetectors plays a critical role in a wide range of applications, including environmental monitoring, biomedical imaging, and secure communications. In this study, we present self-powered solar-blind UV photodetectors based on a vanadium dioxide (VO2)/silicon carbide (SiC) heterojunction. The integration of the narrow-bandgap VO2 film with the wide-bandgap SiC creates a Z-type heterojunction, which significantly enhances photocurrent due to the built-in electric field at the interface. Furthermore, a notable increase in photocurrent is achieved by the deposition of gold nanoparticles on the device's surface. This modification enhances the local electric field via the plasmonic effects, thereby further improving photocurrent. The synergistic effect of the plasmonic field enhancement effect and the built-in electric field of the heterojunction enhances the generation, separation, and transport efficiency of photogenerated carriers, ultimately resulting in a superior photocurrent response. The self-powered UV heterojunction photodetector offers a promising strategy for the advancement of SiC-based optoelectronic devices.

Applied Physics LettersVol. 127(9)
University of Electronic Science and Technology of China (CN), Chengdu University of Technology (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 25%
Ga2O3 and related materials
0.85
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Optical-enhanced, self-powered UV photodetectors based on VO2/SiC heterojunction — Xingyu Liao, Min Gao, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS