Sensitivity of the Threshold Current for Switching of a Magnetic Tunnel Junction to Fabrication Defects and Its Application in Physical Unclonable Functions

A physical unclonable function (PUF) leverages the unclonable random variations in device behavior due to defects incurred during manufacturing to produce a unique “biometric” that can be used for authentication. Here, we show that the threshold current for the switching of a magnetic tunnel junction via spin transfer torque is sensitive to the nature of structural defects introduced during manufacturing and hence can be the basis of a PUF. We use micromagnetic simulations to study the threshold currents for six different defect morphologies at two different temperatures to establish the viability of a PUF. We also derive the challenge–response set at the two different temperatures to calculate the inter- and intra-Hamming distances for a given challenge.