Radiation Damage Mechanisms in <i>β</i> -Ga₂O₃ MSM Solar-Blind Photodetectors: Insights From Proton, Neutron, and <i>γ</i> -Ray Irradiation
Spacecraft that traverse the magnetosphere of Earth encounter intense radiation consisting of high-energy protons, heavy ions, and γ-rays, which introduces complex radiation damage risks to electronic devices onboard. This study systematically investigates the effects of proton, neutron, and γ-ray irradiation on the optoelectronic performance of β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MSM solar-blind photodetectors. By correlating material property evolution with device performance degradation, the damage mechanisms induced by different radiation sources are elucidated. The proton irradiation introduces shallow-level defects via synergistic displacement and ionization damage, while neutron irradiation predominantly generates Frenkel defects through displacement damage. In contrast, γ-ray irradiation induces rapid accumulation of VO at interfaces due to ionization damage, leading to a significant reduction in the Schottky barrier height. Photoelectric characterization demonstrates that β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> photodetectors exhibit superior radiation tolerance to protons and neutrons compared to γ-rays. These findings provide critical theoretical guidance for designing radiation-hardened β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> solar-blind detectors in space radiation environments.
Authors
- Gang Wu
- J. B. Wang
- Fabi Zhang (ORCID: https://orcid.org/0000-0002-4896-6854)
- Daoyou Guo (ORCID: https://orcid.org/0000-0002-6191-1655)
- Xiaolong Guo (ORCID: https://orcid.org/0000-0002-6636-2333)
- Xiangli Zhong (ORCID: https://orcid.org/0000-0002-2639-9131)
Institutions
- Zhejiang Sci-Tech University (CN)
- Xiangtan University (CN)
- Guilin University of Electronic Technology (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-09-02
- DOI
- https://doi.org/10.1109/led.2025.3605225
- Citations
- 7
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 2.99
Funders
- National Natural Science Foundation of China