In Situ GaN Passivation p-GaN Gate HEMT With Synchronously Improved Baliga’s Figure-of-Merit and Superior Dynamic <i>R</i> _ON Robustness

A novel p-GaN gate high electron mobility transistor (HEMT) with the in-situ GaN passivation (ISGP-HEMT) is experimentally proposed for the synchronously improved Baliga’s Figure-of-Merit (B-FOM) and a superior dynamic on-resistance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>) robustness. The ISGP-HEMT features a high-resistivity insitu GaN passivation along the access region to linearize the surface potential, which not only realize a more uniform electric field at off-state but also enhance the two-dimensional-electrongas (2DEG) density at on-state. Thereby the increased breakdown voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BV</i>) and the reduced <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> is obtained synchronously, leading to an 494% improved B-FOM compared to conventional device. Moreover, the in-situ passivation mode effectively suppresses hot-electron bombardment at the interface, substantially enhancing the robustness of dynamic <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> in ISGP-HEMT. These findings demonstrate that the proposed device is a highly promising candidate for low-loss GaN power applications.