Al/PCBM/WSe₂:MXene/PTPD/ITO Flexible Broadband Photodetector

This article demonstrates a broadband photodetector based on a ITO/Poly-TPD/WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>: MXene/PCBM/Al architecture. The dispersion method prepared Poly-TPD (PTPD) and PCBM functions as hole transport layer (HTL) and electron transport layer (ETL) while WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>: MXene nanocomposite (NC) serves as the active layer in the device. The film deposition is executed using spin coater whereas Al electrode deposition is performed in thermal evaporation chamber using shadow masking approach. At 350 nm (UV), 400 nm (visible), and 1450 nm (IR), the suggested photodetector shows maximum responsivity (A/W) of 2354, 2425, and 736.7 for -1V bias at a fixed optical power of 0.118 μW. The interfacial layers (ETL/HTL) and WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>: MXene nanocomposite shows promising characteristic for the use in optoelectronic applications.