Fabry–Perot Semiconductor Laser With High-Temperature Operation

We experimentally demonstrate a 1.31-μm Fabry- Perot (FP) semiconductor laser developed for data communications at temperatures exceeding 130 °C based on InGaAlAs/InP material system. By optimizing the epi-structure as well as doping profiles, we were able to demonstrate that the device can be operated at ambient temperature as high as 150 °C with an output power of about 2.8 mW when the cavity length is 300 μm. This work paves the way for high-temperature applications, making it feasible to develop low-cost devices without the additional cooling equipments.