Length dependent hysteresis phenomena in negative capacitance field effect transistor

Abstract In this article, we explore a noteworthy aspect of Negative Capacitance FETs (NCFETs): the influence of transistor feature size on hysteresis behavior. The ferroelectric capacitance is directly proportional to the channel length, so as the transistor is scaled down, both the ferroelectric and MOS capacitances decrease. Our analysis shows that at a channel length of 16 nm, the ferroelectric capacitance falls below the MOS capacitance, resulting in the emergence of hysteresis in the device characteristics. Additionally, we investigate how scaling the transistor feature size impacts key phenomena such as negative Drain-Induced Barrier Lowering (DIBL), negative differential resistance (NDR), and the negative body effect coefficient. We also evaluate the performance of an NCFET-based inverter across different channel lengths and find that the device with a 22 nm channel length exhibits the lowest static and dynamic power dissipation among the cases studied.