Impact of high oxygen deficiency on the photoluminescence properties of black zinc oxide thin films
The presence of oxygen deficiency in ZnO thin films is a key factor for tailoring their optical and electrical properties. Highly oxygen-deficient zinc oxide thin films were synthesized by pulsed electron beam deposition and investigated by Rutherford backscattering spectrometry, photoluminescence, X-ray diffraction, Hall effect measurements, and X-ray photoelectron spectroscopy. At a high degree of deficiency of about 15%, leading to black (or dark) films, zinc oxide films were found to be amorphous. The optical properties are dominated by the introduction of deep-level defect states that absorb visible light, whereas the electrical properties are governed by the increased electron concentration in the conduction band (6.55 × 10<sup>20</sup> cm<sup>-3</sup>). These oxygen-deficient zinc oxide films exhibited enhanced violet and blue photoluminescence emission in the range of 408-456 nm, attributed to zinc interstitials and their extended states.
Authors
- M. Nistor (ORCID: https://orcid.org/0000-0001-6462-6123)
- Daniela Dobrin (ORCID: https://orcid.org/0000-0003-2417-2395)
- J. Perrière (ORCID: https://orcid.org/0000-0002-7428-2317)
- F. Gherendi (ORCID: https://orcid.org/0000-0003-0674-8856)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Sorbonne Université (FR)
- National Institute for Laser Plasma and Radiation Physics (RO)
- Institut des NanoSciences de Paris (FR)
Publication Details
- Journal
- Nanoscale
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5nr01937k
- Citations
- 5
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 2.59
Funders
- Université Pierre et Marie Curie
- Sorbonne Université