Aluminum oxynitrides doped with rare-earth and transition metal ions

Objectives . The work set out to summarize the results of the studies of aluminum oxynitrides (AlONs) doped with rare earth (REM) and transition metals (TM) and to highlight the main effects of REM and TM dopants on the formation, phase composition, and optical properties of the AlON. Results . The presented analysis of the literature data includes the results of our own studies of the AlON doped with REM and TM ions. The influence of REM and TM additives on the formation of AlON and its phase com position, as well as optical properties, was considered. Conclusions . It is clearly shown that the doping with REM and TM ions enhances the formation of pure AlON phase via high-temperature synthesis from oxide and nitride. The oxynitride matrix exhibits reducing properties with respect to both REM and TM. Doping with the REM ions leads to the emergence of luminescent properties in the visible range, while doping with TM ions affects the band gap in AlON as a semiconductor. The solubility limits of all metals in the AlON matrix do not exceed 1–2 at. % vs Al. Concentration quenching of luminescence is observed at REM contents from 0.1 to 0.5 at. %.