Study of the Source Drain Tunneling Current for FinFET at Cryogenic Temperature

The study on transistors operating at low temperatures has been getting more attention due to quantum computing applications. In this paper, an analytical model has been presented based on the Wentzel's-Kramer-Brillouin (WKB) approximation and the transmission probability for the FinFET 5 nm using the Landauer approach to study the source to drain tunneling current. The simulated model using a quantum correction fit very well with the measurement data at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$T=300 K$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$T=77 K$</tex> for subthreshold region for both <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$N$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$P$</tex> FinFET.