Electronic Properties and Ballistic Transport in the 1D Van Der Waals Material $\text{Si}_{2} \text{Br}_{4}$

Gate-all-around field-effect transistors (GAAFETs) are emerging as the future transistor architecture. At sub- 10 nm technology nodes, conventional channel materials often suffer from atomic-scale imperfections, leading to a decline in carrier transport properties and transistor performance. One-dimensional (1D) van der Waals (vdW) materials are promising alternatives to conventional semiconductors due to their unique electronic and transport characteristics and atomically perfect surfaces free of dangling bonds. Using density functional theory (DFT) calculations and non-equilibrium Green's function (NEGF) formalism for quantum transport, in this study we explore the electronic and transport properties of the 1 D vdW material <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Si}_{2} \text{Br}_{4}$</tex> and assess its feasibility as a channel material in a circular GAA FET device with a 15 nm gate length.