600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform

Laterally “diffused” metal oxide semiconductor transistors (LDMOS) play an important role for the integration of power electronics in integrated circuits, due to their lateral structure matching the CMOS design architecture. This work demonstrates the successful fabrication of LDMOS transistors on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$4 \mathrm{H}-\text{SiC}$</tex> and their operation at temperatures up to 600 °C. That capability allows power devices to operate at higher temperatures beyond the limits of Silicon MOSFETs, eliminating the need for complex cooling systems for the integrated circuit. In this work, low threshold voltage shift, especially for operation temperatures above <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$300{ }^{\circ} \mathrm{C}$</tex>, temperature dependence of the on-state resistance and the saturation current, as well as permanent degradation processes are discussed.