Fabrication and Electrical Characterization of Pure Boron on 4H-SiC Junctions

In this work, the Boron-on-Silicon junction concept, which exhibits bipolar diode behavior, was transferred to Silicon Carbide (SiC). We focus on the electrical behavior of a 3 nm Boron layer on the hexagonal (0001) interface of 4H-SiC. The layer was evaporated at a substrate temperature of 300°C and subsequently encapsulated by an Aluminum layer. The as-deposited Boron-on-4H-SiC diodes show Schottky-behavior and a workfunction of 3.89 eV for Boron. Subsequent heat treatment above 500°C revealed characteristics comparable to merged-p-i-n-Schottky-diodes (MPS), which hints towards partial reconfiguration of the Boron-on-4H-SiC interface and bipolar behavior.