Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes

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Published
2025-06-02
DOI
https://doi.org/10.1109/mipro65660.2025.11131817
Primary Topic
Silicon Carbide Semiconductor Technologies
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article
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article

Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes

Alexander May, Jörg Schulze, Jan F. Dick, B. Schwemmer
Silicon Carbide Semiconductor Technologies
article

Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes

Alexander May, Jörg Schulze, Jan F. Dick, B. Schwemmer
article en

Abstract

No abstract available for this paper.
Friedrich-Alexander-Universität Erlangen-Nürnberg (DE), Fraunhofer Institute for Integrated Systems and Device Technology (DE)
Openalex Percentile: Top 78%
Silicon Carbide Semiconductor Technologies
DOISourceOpenAlex
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Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes — Alexander May, Jörg Schulze, et al. · (2025) | TGRS Research Map | TGRS