Controllable 1 × 2 optical power splitter based on In2Se3

Optical power splitters are essential components in photonic integrated circuits (PICs). Tunable optical power splitters significantly enhance the flexibility of PICs, expanding their range of applications. Power splitters based on multimode interference (MMI) structures have gained attention due to their broad bandwidth and high manufacturing tolerance. This paper proposes an asymmetric 1×2 MMI power splitter, with the MMI region constructed using the phase-change material In2Se3. By reversibly switching between the α and β phases of In2Se3, arbitrary power splitting ratios (PSRs) can be achieved. The proposed device, with dimensions of 4.27×2.4 μm, demonstrates a bandwidth from 1530 to 1560 nm and insertion loss under 0.6 dB at 1550 nm.

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Publication Details

Journal
Optical Engineering
Published
2025-09-02
DOI
https://doi.org/10.1117/1.oe.64.9.097101
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Controllable 1 × 2 optical power splitter based on In2Se3

Zhenrong Zhang, Xin He, Hansi Ma, Zhaojian Zhang et al.
Optical Engineering
Photonic and Optical Devices
article

Controllable 1 × 2 optical power splitter based on In2Se3

Zhenrong Zhang, Xin He, Hansi Ma, Zhaojian Zhang, Xueling Wei, Haitang Li, Yang Yu, Huan Chen, Shengru Zhou, Qiong He, Qiang Liu, Yiyi Zhang, Honglin He, Junbo Yang, Xiaopeng Huang, Te Du
article en

Abstract

Optical power splitters are essential components in photonic integrated circuits (PICs). Tunable optical power splitters significantly enhance the flexibility of PICs, expanding their range of applications. Power splitters based on multimode interference (MMI) structures have gained attention due to their broad bandwidth and high manufacturing tolerance. This paper proposes an asymmetric 1×2 MMI power splitter, with the MMI region constructed using the phase-change material In2Se3. By reversibly switching between the α and β phases of In2Se3, arbitrary power splitting ratios (PSRs) can be achieved. The proposed device, with dimensions of 4.27×2.4 μm, demonstrates a bandwidth from 1530 to 1560 nm and insertion loss under 0.6 dB at 1550 nm.

Optical EngineeringVol. 64(09)
Guangxi University (CN), National University of Defense Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Hunan Province
Openalex Percentile: Top 78%
Photonic and Optical Devices
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