Unveiling the invisible: Polarization-sensitive ferroelectric photomemristors for enhanced image recognition

Photoresponsive memristors (i.e., photomemristors) have been recently highly regarded to tackle data latency and energy consumption challenges in conventional Von Neumann architecture-based image recognition systems. However, their efficacy in recognizing low-contrast images is quite limited, and while preprocessing algorithms are usually employed to enhance these images, which naturally introduce delays that hinder real-time recognition in complex conditions. To address this challenge, here we present a self-driven polarization-sensitive ferroelectric photomemristor inspired by advanced biological systems. The proposed prototype device is engineered to extract image polarization information, enabling real-time and in-situ enhanced image recognition and classification capabilities. By combining the anisotropic optical feature of the two-dimensional material (ReSe<sub>2</sub>) and ferroelectric polarization of single-crystalline Diisopropylammonium Bromide (DIPAB) thin film, tunable and self-driven polarized responsiveness with intelligence was achieved. With remarkable optoelectronic synaptic characteristics of the fabricated device, a significant enhancement was demonstrated in recognition probability—averaging an impressive 85.9% for low-contrast scenarios, in contrast to the mere 47.5% exhibited by traditional photomemristors. This holds substantial implications for the detection and recognition of subtle information in diverse scenes such as autonomous driving, medical imaging, and astronomical observation.

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Publication Details

Journal
Nano Research
Published
2025-09-02
DOI
https://doi.org/10.26599/nr.2025.94908019
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Unveiling the invisible: Polarization-sensitive ferroelectric photomemristors for enhanced image recognition

Chunxiao Cong, Zhijun Qiu, Xiaofei Yue, Dacheng Xia et al.
4 links
Nano Research
Advanced Memory and Neural Computing
article

Unveiling the invisible: Polarization-sensitive ferroelectric photomemristors for enhanced image recognition

Chunxiao Cong, Zhijun Qiu, Xiaofei Yue, Dacheng Xia, Laigui Hu, Shuwen Shen, Jiao Wang, Ran Liu, Chenxu Sheng, Shoaib Awan
article en

Abstract

Photoresponsive memristors (i.e., photomemristors) have been recently highly regarded to tackle data latency and energy consumption challenges in conventional Von Neumann architecture-based image recognition systems. However, their efficacy in recognizing low-contrast images is quite limited, and while preprocessing algorithms are usually employed to enhance these images, which naturally introduce delays that hinder real-time recognition in complex conditions. To address this challenge, here we present a self-driven polarization-sensitive ferroelectric photomemristor inspired by advanced biological systems. The proposed prototype device is engineered to extract image polarization information, enabling real-time and in-situ enhanced image recognition and classification capabilities. By combining the anisotropic optical feature of the two-dimensional material (ReSe<sub>2</sub>) and ferroelectric polarization of single-crystalline Diisopropylammonium Bromide (DIPAB) thin film, tunable and self-driven polarized responsiveness with intelligence was achieved. With remarkable optoelectronic synaptic characteristics of the fabricated device, a significant enhancement was demonstrated in recognition probability—averaging an impressive 85.9% for low-contrast scenarios, in contrast to the mere 47.5% exhibited by traditional photomemristors. This holds substantial implications for the detection and recognition of subtle information in diverse scenes such as autonomous driving, medical imaging, and astronomical observation.

Nano ResearchVol. 19(1)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 78%
Advanced Memory and Neural Computing
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