AlScN Thin Films for the Piezoelectric Transduction of Suspended Microchannel Resonators

Suspended microchannel resonators (SMRs) are powerful tools for mass, density, and viscosity sensing. Among various transduction methods, full piezoelectric transduction offers key advantages, including on-chip integration, low energy dissipation, and linear response. This work explores sub-200 nm Al<sub>0.6</sub>Sc<sub>0.4</sub>N thin films for SMR transduction, benchmarking them against their well-established AlN predecessor. By integrating the piezoelectric stack into low-stress silicon nitride (ls-SiN<sub>x</sub>) beam resonators, we investigate the impact of bottom electrode design, photoresist removal prior to deposition, and deposition bias on film quality. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), d<sub>31</sub> piezoelectric coefficient, relative dielectric permittivity, and breakdown field measurements. Results illustrate the impacts of the studied parameters and demonstrate a fourfold increase in d<sub>31</sub>, compared to AlN, confirming the strong potential of Al<sub>0.6</sub>Sc<sub>0.4</sub>N for high-performance SMR transduction.

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Publication Details

Journal
Sensors
Published
2025-08-31
DOI
https://doi.org/10.3390/s25175370
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
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article

AlScN Thin Films for the Piezoelectric Transduction of Suspended Microchannel Resonators

Luis Guillermo Villanueva, Marco Liffredo, Yara Abdelaal
Sensors
Acoustic Wave Resonator Technologies
article

AlScN Thin Films for the Piezoelectric Transduction of Suspended Microchannel Resonators

Luis Guillermo Villanueva, Marco Liffredo, Yara Abdelaal
article en

Abstract

Suspended microchannel resonators (SMRs) are powerful tools for mass, density, and viscosity sensing. Among various transduction methods, full piezoelectric transduction offers key advantages, including on-chip integration, low energy dissipation, and linear response. This work explores sub-200 nm Al<sub>0.6</sub>Sc<sub>0.4</sub>N thin films for SMR transduction, benchmarking them against their well-established AlN predecessor. By integrating the piezoelectric stack into low-stress silicon nitride (ls-SiN<sub>x</sub>) beam resonators, we investigate the impact of bottom electrode design, photoresist removal prior to deposition, and deposition bias on film quality. Characterization includes X-ray diffraction (XRD), scanning electron microscopy (SEM), d<sub>31</sub> piezoelectric coefficient, relative dielectric permittivity, and breakdown field measurements. Results illustrate the impacts of the studied parameters and demonstrate a fourfold increase in d<sub>31</sub>, compared to AlN, confirming the strong potential of Al<sub>0.6</sub>Sc<sub>0.4</sub>N for high-performance SMR transduction.

SensorsVol. 25(17)
Swiss Polar Institute (CH), École Polytechnique Fédérale de Lausanne (CH)
National Science Foundation, École Polytechnique Fédérale de Lausanne, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Openalex Percentile: Top 78%
Acoustic Wave Resonator Technologies
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AlScN Thin Films for the Piezoelectric Transduction of Suspended Microchannel Resonators — Luis Guillermo Villanueva, Marco Liffredo, et al. · Sensors (2025) | TGRS Research Map | TGRS