The Material Growth and Characteristics of Transition Metal Oxide Thin Films Based on Hot Wire Oxidation Sublimation Deposition Technology

Transition-metal oxides (TMOs) possess pronounced optoelectronic properties and are widely exploited in photovoltaics and photocatalysis. Here, we introduce a hot wire oxidation sublimation deposition (HWOSD) that directly converts elemental Mo and W into amorphous MoO_x and WO_x films on various substrates. Scanning electron microscopy and atomic force microscopy reveal uniform thickness and conformal coverage over textured and planar surfaces. X-ray photoelectron spectroscopy indicates high oxygen contents with stoichiometric ratios of 2.94 (MoO_x) and 2.91 (WO_x). Optical measurements show transmittances > 94% across 400-1200 nm, yielding optical band gaps of 1.86 eV (MoO_x) and 2.67 eV (WO_x). The conductivities of MoO_x and WO_x were 2.58 × 10^-6 S cm^-1 and 5.14 × 10^-7 S cm^-1 at room temperature, and the TMO/Si surface potential differences are 200 mV and 114 mV, respectively. Minority-carrier-lifetime measurements indicate that MoO_x films confer an additional passivation benefit to the i a-Si:H/c-Si/i a-Si:H stack. Annealing of MoO_x and WO_x realized their phase transition from an amorphous state to a polycrystalline state, with changes in their optical transmittance in the visible light region. Investigation of the photovoltaic performances of MoO_x and WO_x as HTLs deposited by HWOSD demonstrates their excellent electronic functionality in optoelectronics. These results establish HWOSD as a scalable, low-temperature method to fabricate high-quality TMO films and expand their potential in advanced optoelectronic devices.