Self‐Driven Broadband Photodetector Based on 2D SnSe Nanoflake/p‐Si Type‐II Heterojunction

Among chalcogenides‐based material SnSe is gaining attention in the field of optoelectronics due to its excellent electrical, optical and thermal properties. Herein, the broadband photodetectivity (under visible wavelength) using fabricated photodetectors of nano‐SnSe/ p ‐Si heterojunction based on grown SnSe nanostructures (nanoparticles, nanoflakes, and nanoflowers) is inspected. The short‐circuit current and open‐circuit voltage of 2D‐SnSe‐nanoflakes/Si type‐II heterojunction device reveal the self‐driven property of the device and show superior photosensing performance (having responsivity 992.9 mA W −1 , detectivity 6.77 × 10 9 Jones). Current increases to 1.74 times under photoirradiance, compared to the dark current. The fast switching ( τ r = 140 ms, τ d = 110 ms), high on‐off ratio, and stable performance of the photosensing device pave a way for the fabrication of cost‐effective and efficient photodetector with high performance for the application in optoelectronics and photonics devices.