Comparative nanopatterning of single-component semiconductors using oblique argon cluster ion bombardment

Self-organized surface nanopatterning using a noble gas cluster ion beam is a promising method for modifying the functional properties of materials. In this work, the formation of nanoripples on the surfaces of Ge and Si using an oblique argon cluster ion bombardment was studied. From the initial stage to the development of mature patterns, the parameters of the emerging nanoripples, sputtering yields, and changes in the structural properties of the materials were explored. Experimental results revealed that, under the same conditions, the parameters of resulting nanostructures on the surface of Ge and Si are similar. To advance the understanding of the self-organized nanostructuring process by gas cluster ions, the characteristic stages of patterning have been identified. A comparative analysis of nanopatterning by cluster ions and atomic ions, based on experimental data and molecular dynamic (MD) simulation, is presented. The surface morphology at different stages of nanopatterning is examined. It was found that well-developed nanoripples formed on the surface of semiconductors largely retain the original crystalline structure of the material. A non-uniform distribution of the amorphized layer across the surface of the formed nanostructures was observed. The minimum cluster ion fluence required to initiate patterning of the semiconductor surface has been determined. • Comparative self-organized nanopatterning of single-component semiconductors using GCIB. • Particular stages of the ripple evolution under GCIB bombardment are distinguished. • Developed nanoripples mainly retain the initial crystalline structure of semiconductors. • Anisotropy of amorphous layer thickness on ripple surface is founded. • Surface morphology at different stages of nanopatterning is explored.