MXene‐Enabled Photodetectors: Material Modulation, Device Performance Enhancement, and Recent Progress
Abstract Photodetectors incorporating MXenes as supporting components demonstrate high sensitivity, rapid response speed, and self‐powered operation, overcoming the shortcomings of low sensitivity, slow response, and high‐power consumption. This review systematically elucidates the fundamental optoelectronic properties of MXenes, and provides a comprehensive analysis of advanced device architectures leveraging MXenes as transparent electrodes, Schottky contact electrodes, and carrier transport layers. Additionally, the review summarizes the latest advancements in MXene‐enabled photodetectors and emphasizes their promising future in transparent electronics, image recognition systems, and flexible visual sensing platforms. Future research will focus on enhancing synthesis methods, improving long‐term stability, and exploring novel device architectures to ensure MXene‐enabled photodetectors continue to drive innovation in next‐generation optoelectronic devices.
Authors
- Qing Wu (ORCID: https://orcid.org/0000-0002-8716-7342)
- Lei Xu (ORCID: https://orcid.org/0000-0001-6422-7210)
- Xinyan Liu (ORCID: https://orcid.org/0009-0008-0430-7081)
- Xuhui Zhang (ORCID: https://orcid.org/0000-0002-6822-8744)
- Tong Zheng
- Yixin Yan (ORCID: https://orcid.org/0000-0003-4167-9745)
- Qian Zhang (ORCID: https://orcid.org/0000-0001-9502-7342)
Institutions
- Harbin University of Science and Technology (CN)
- Beijing Technology and Business University (CN)
- Suzhou City University
Publication Details
- Journal
- Advanced Optical Materials
- Published
- 2025-09-01
- DOI
- https://doi.org/10.1002/adom.202501776
- Citations
- 1
- Primary Topic
- MXene and MAX Phase Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China