On-Wafer Polarity-Specific Response Well-Plasma Charging Recorder in 16 nm CMOS FinFET Technology
This article studies the characteristics of the floating-gate (FG)-based plasma charging detecting recorder realized in FinFET CMOS logic process. The proposed device enables accurate detection and quantification of plasma-induced charging on wafer surfacing in plasma processing chambers. A new fin-coupled structure by different types of wells is introduced to separately record the ion and electron charging effects, providing detailed insights into plasma-induced transient charging phenomena. This approach offers a reliable wafer-level monitoring solution for advanced CMOS production lines.
Authors
- Pin‐Jiun Wu (ORCID: https://orcid.org/0000-0002-1445-8261)
- Jonathan Chang (ORCID: https://orcid.org/0000-0002-3811-1254)
- Ya‐Chin King (ORCID: https://orcid.org/0000-0003-4065-0350)
- Wei Chang (ORCID: https://orcid.org/0009-0004-7877-533X)
- Burn J. Lin (ORCID: https://orcid.org/0000-0003-1024-9515)
- Yue‐Der Chih
- Jiaw‐Ren Shih
- Chrong Jung Lin
- Shang-Jeng Tsai
Institutions
- National Tsing Hua University (TW)
- National Synchrotron Radiation Research Center (TW)
- Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-09-01
- DOI
- https://doi.org/10.1109/ted.2025.3600217
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Science and Technology, Taiwan