Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Capacitors
this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">18</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">49</sub> layer was formed between the bottom electrode and HZO layer. This work provides a perspective to optimize the bottom electrode annealing conditions to enhance the endurance characteristics of W/HZO/W capacitors.
Authors
- Changhwan Shin (ORCID: https://orcid.org/0000-0001-6057-3773)
- Changwoo Han (ORCID: https://orcid.org/0000-0001-8004-9661)
- Y. Choi (ORCID: https://orcid.org/0000-0003-1394-2497)
- Hyeonjung Park (ORCID: https://orcid.org/0000-0003-1177-3095)
- Man‐Sik Choi (ORCID: https://orcid.org/0000-0001-7902-9567)
- Sangmin Won
Institutions
- Korea University (KR)
- Samsung (South Korea) (KR)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-09-01
- DOI
- https://doi.org/10.1109/led.2025.3603933
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea