Investigation of Photoluminescence Properties and Random Lasing Behaviors in Dy<sup>3+</sup>-Doped Sr<sub>2</sub>MgMoO<sub>6</sub> Phosphors

Lanthanide-doped phosphors are of importance in the practical applications. In this work, we investigated the photoluminescence properties and random lasing behaviors of Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup>-doped Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors synthesized by the high-temperature solid-state method. The SEM, XRD, and EDS with elemental mapping results reveal the successful fabricating of the high-quality Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors and confirm the uniform distribution of constituent elements. Structural characterization through precise Rietveld refinement confirmed that the material crystallizes in a tetragonal system with space group I4/m (No. 87), and its refined lattice parameters are also determined. The effect of different Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> doping concentrations on the luminescent properties was analyzed. The optimal doping concentration for achieving efficient luminescence is fixed at 0.08 mol%. Typical emission peaks centered at 484 nm, 576 nm, 656 nm, and 756 nm of Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> were observed under the blue light excitation. Additionally, random lasing phenomena were observed in the Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors when excited with a 355 nm pulsed laser under varying pump power densities. The random lasing behaviours were confirmed by the emergence of narrow emission peaks with a narrow full width at half maximum (FWHM) and the dependence of the intensity on the excitation intensity. This work highlights the potential of Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup>-doped Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors as efficient luminescent materials and demonstrates their application in random lasing, which opens new possibilities for their use in optoelectronic and laser technologies.

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Journal
IEEE photonics journal
Published
2025-09-01
DOI
https://doi.org/10.1109/jphot.2025.3604818
Primary Topic
Luminescence Properties of Advanced Materials
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article
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article

Investigation of Photoluminescence Properties and Random Lasing Behaviors in Dy3+-Doped Sr2MgMoO6 Phosphors

Maohui Yuan, Yijie Sun, Xin Guo, Qing Huang et al.
IEEE photonics journal
Luminescence Properties of Advanced Materials
article

Investigation of Photoluminescence Properties and Random Lasing Behaviors in Dy3+-Doped Sr2MgMoO6 Phosphors

Maohui Yuan, Yijie Sun, Xin Guo, Qing Huang, Kai Han
article en

Abstract

Lanthanide-doped phosphors are of importance in the practical applications. In this work, we investigated the photoluminescence properties and random lasing behaviors of Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup>-doped Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors synthesized by the high-temperature solid-state method. The SEM, XRD, and EDS with elemental mapping results reveal the successful fabricating of the high-quality Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors and confirm the uniform distribution of constituent elements. Structural characterization through precise Rietveld refinement confirmed that the material crystallizes in a tetragonal system with space group I4/m (No. 87), and its refined lattice parameters are also determined. The effect of different Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> doping concentrations on the luminescent properties was analyzed. The optimal doping concentration for achieving efficient luminescence is fixed at 0.08 mol%. Typical emission peaks centered at 484 nm, 576 nm, 656 nm, and 756 nm of Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> were observed under the blue light excitation. Additionally, random lasing phenomena were observed in the Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors when excited with a 355 nm pulsed laser under varying pump power densities. The random lasing behaviours were confirmed by the emergence of narrow emission peaks with a narrow full width at half maximum (FWHM) and the dependence of the intensity on the excitation intensity. This work highlights the potential of Dy<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup>-doped Sr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>MgMoO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> phosphors as efficient luminescent materials and demonstrates their application in random lasing, which opens new possibilities for their use in optoelectronic and laser technologies.

IEEE photonics journalVol. 17(5)
National University of Defense Technology (CN)
Openalex Percentile: Top 83%
Luminescence Properties of Advanced Materials
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