Lateral, Directional, and Polarized Light Emission from a Silicon Metasurface

Silicon (Si) light sources integratable with Si waveguides are highly desirable in integrated optical circuits. Here, we investigated systematically the light emission from a Si metasurface constructed with paired Si nanocuboids under the excitation of 400 nm femtosecond laser pulses. It was revealed that such a Si metasurface supports various optical resonances in the visible-to-near-infrared spectral range. We observed the burst of hot-electron luminescence with reduced line width above a threshold of excitation irradiance. It was found that the luminescence emits mainly in the transverse direction and exhibits a dependence on the wavelength. It was shown that the blue-green light is coupled into the adjacent Si waveguide and propagates a long distance. It was confirmed that the emitted light is linearly polarized, which is independent of the polarization of the excitation laser light. Our findings pave the way for realizing Si-based lasers for integrated optical circuits.

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Publication Details

Journal
Nano Letters
Published
2025-09-01
DOI
https://doi.org/10.1021/acs.nanolett.5c03222
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
0.00

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article

Lateral, Directional, and Polarized Light Emission from a Silicon Metasurface

Shimei Liu, Lidan Zhou, Jinxiang Li, Sheng Lan et al.
Nano Letters
Silicon Nanostructures and Photoluminescence
article

Lateral, Directional, and Polarized Light Emission from a Silicon Metasurface

Shimei Liu, Lidan Zhou, Jinxiang Li, Sheng Lan, Jin Xiang, Fu Deng, Zhuo Wang, Yuheng Mao
article en

Abstract

Silicon (Si) light sources integratable with Si waveguides are highly desirable in integrated optical circuits. Here, we investigated systematically the light emission from a Si metasurface constructed with paired Si nanocuboids under the excitation of 400 nm femtosecond laser pulses. It was revealed that such a Si metasurface supports various optical resonances in the visible-to-near-infrared spectral range. We observed the burst of hot-electron luminescence with reduced line width above a threshold of excitation irradiance. It was found that the luminescence emits mainly in the transverse direction and exhibits a dependence on the wavelength. It was shown that the blue-green light is coupled into the adjacent Si waveguide and propagates a long distance. It was confirmed that the emitted light is linearly polarized, which is independent of the polarization of the excitation laser light. Our findings pave the way for realizing Si-based lasers for integrated optical circuits.

Nano LettersVol. 25(36)
Sun Yat-sen University (CN), Chongqing University (CN), Nanyang Technological University (SG), South China Normal University (CN), NeoPhotonics (United States) (US), State Key Laboratory of Optoelectronic Materials and Technology
National Natural Science Foundation of China, South China Normal University
Openalex Percentile: Top 83%
Silicon Nanostructures and Photoluminescence
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