Construction of mesoporous CeO2/ZnO composite abrasives with heterogeneous structure and application to photochemical mechanical polishing (PCMP) of quartz glass

In this work, mesoporous CeO 2 /ZnO composite abrasives with a heterogeneous structure were constructed by a two-step hydrothermal method and applied to a photochemical mechanical polishing (PCMP) system. Characterization of morphology, structure, and properties of mesoporous CeO 2 /ZnO composite abrasives by XRD, SEM, TEM, Raman, BET, XPS, and PL spectroscopy. To discuss the removal mechanism of materials by the synergistic effect between the chemical-mechanical behavior of mesoporous CeO 2 /ZnO composite abrasives and photocatalytic oxidation. The elastic deformation ability of the mesoporous CeO 2 matrix can reduce the generation of mechanical scratches. The loading of ZnO leads to the enhancement of Ce 3+ and oxygen vacancies in the CeO 2 lattice, which increases the active sites during polishing and promotes the generation of chemical bonding of Ce-O-Si. The type-II heterostructure formed by CeO 2 /ZnO enhances the photogenerated carrier separation efficiency and accelerates the generation of oxidatively active groups and the formation of hydrated layers on the surface of silicon-based materials. The combined effect of all three makes it possible to achieve efficient material removal and a high-quality surface for quartz glass in the PCMP process. The experimental results showed that the mesoporous CeO 2 /ZnO composite abrasives polished the silica-based material with a smooth and flat surface (Ra = 0.17 nm), and the MRR was increased by 41 % relative to mesoporous CeO 2 . Schematic of the PCMP mechanism of CeO 2 /ZnO composites on quartz glass. • Mesoporous CeO 2 /ZnO composite abrasives with type-II heterostructure constructed via a two-step hydrothermal method. • Type-II heterostructures can reduce the electron and hole complexation efficiency and improve photocatalytic performance. • Loading of ZnO leads to the enhancement of Ce 3+ and oxygen vacancies in CeO 2 lattice. • In PCMP, the polishing performance of abrasive grains is influenced by morphology, defects, and photocatalytic capacity.

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Publication Details

Journal
Materials Science in Semiconductor Processing
Published
2025-08-30
DOI
https://doi.org/10.1016/j.mssp.2025.109986
Citations
1
Primary Topic
Advanced Surface Polishing Techniques
Type
article
Field-Weighted Citation Impact
0.67

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article

Construction of mesoporous CeO2/ZnO composite abrasives with heterogeneous structure and application to photochemical mechanical polishing (PCMP) of quartz glass

Ziheng Gao, Ning Xu, Jiaguo Yu, Zhuo Wang et al.
1 citations
Materials Science in Semiconductor Processing
Advanced Surface Polishing Techniques
0.67
article

Construction of mesoporous CeO2/ZnO composite abrasives with heterogeneous structure and application to photochemical mechanical polishing (PCMP) of quartz glass

Ziheng Gao, Ning Xu, Jiaguo Yu, Zhuo Wang, Yu Lin, Guosheng Zhang, Yansong Wang, Kailong Gao
article en
1 citations

Abstract

In this work, mesoporous CeO 2 /ZnO composite abrasives with a heterogeneous structure were constructed by a two-step hydrothermal method and applied to a photochemical mechanical polishing (PCMP) system. Characterization of morphology, structure, and properties of mesoporous CeO 2 /ZnO composite abrasives by XRD, SEM, TEM, Raman, BET, XPS, and PL spectroscopy. To discuss the removal mechanism of materials by the synergistic effect between the chemical-mechanical behavior of mesoporous CeO 2 /ZnO composite abrasives and photocatalytic oxidation. The elastic deformation ability of the mesoporous CeO 2 matrix can reduce the generation of mechanical scratches. The loading of ZnO leads to the enhancement of Ce 3+ and oxygen vacancies in the CeO 2 lattice, which increases the active sites during polishing and promotes the generation of chemical bonding of Ce-O-Si. The type-II heterostructure formed by CeO 2 /ZnO enhances the photogenerated carrier separation efficiency and accelerates the generation of oxidatively active groups and the formation of hydrated layers on the surface of silicon-based materials. The combined effect of all three makes it possible to achieve efficient material removal and a high-quality surface for quartz glass in the PCMP process. The experimental results showed that the mesoporous CeO 2 /ZnO composite abrasives polished the silica-based material with a smooth and flat surface (Ra = 0.17 nm), and the MRR was increased by 41 % relative to mesoporous CeO 2 . Schematic of the PCMP mechanism of CeO 2 /ZnO composites on quartz glass. • Mesoporous CeO 2 /ZnO composite abrasives with type-II heterostructure constructed via a two-step hydrothermal method. • Type-II heterostructures can reduce the electron and hole complexation efficiency and improve photocatalytic performance. • Loading of ZnO leads to the enhancement of Ce 3+ and oxygen vacancies in CeO 2 lattice. • In PCMP, the polishing performance of abrasive grains is influenced by morphology, defects, and photocatalytic capacity.

Materials Science in Semiconductor ProcessingVol. 200
Shaanxi University of Science and Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Shaanxi University of Science and Technology, Key Research and Development Projects of Shaanxi Province
Openalex Percentile: Top 27%
Advanced Surface Polishing Techniques
0.67
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