Fabrication of organic integrated circuits based on the iodine-containing organic semiconductor I-ATT using solution shearing and a liquid-repellent pattern

Abstract Solution-sheared organic semiconductor films were fabricated using hydrophobic banks to yield high crystallinities and patterning. Herein, the I-containing material 2-iodoanthra [2, 3-b] thieno [2, 3-d] thiophene (I-ATT) exhibited an enhancement-mode organic thin-film transistor performance, with a respective mobility, threshold potential, and on/off ratio of 0.6 cm 2 V −1 s −1 , –11 V, and 10 3 . The electrode alignment displayed a minimal effect on the mobility. Furthermore, inverter and NAND circuits based on a pseudo-complementary metal-oxide-semiconductor configuration exhibited reliable switching. These results indicate the viability of using solution-sheared I-ATT films in functional circuits, highlighting their potential for large-scale integration into printed electronics.