Transient Multi‐Physical Field‐Circuit and Electro‐Thermal Coupling of Dual PIN Diode Limiter

ABSTRACT In this paper, a method combining the Finite‐Difference Time‐Domain (FDTD) method and the semiconductor drift‐diffusion model (DDM) is presented for analyzing transient electro‐thermal characteristics of dual PIN diode microwave limiters. the time domain impulse response signals corresponding to the ports of linear electromagnetic field structures are calculated using the FDTD algorithm. These signals are then coupled with the volt‐ampere characteristics as defined by the DDM‐based dual‐PIN diode model. The transient electro‐thermal properties of the dual‐PIN diode within the actual microwave limiter circuit are analyzed, with the method's accuracy and efficiency validated through comparison with COMSOL simulation results.