InP Quantum Dots with a Strain-Engineered Gradient Shell for Enhanced Optical Performance and Stability
InP quantum dots have emerged as a promising ecofriendly alternative to cadmium-based QDs for next-generation display applications. However, red-emitting InP QDs synthesized via aminophosphine precursors still suffer from broad emission spectra and limited stability. In this study, we present a strain-engineered InP/ZnSe/ZnSe<sub><i>x</i></sub>S<sub>1-<i>x</i></sub>/ZnS QD structure featuring a gradient alloyed ZnSe<sub><i>x</i></sub>S<sub>1-<i>x</i></sub> shell that effectively mitigates lattice mismatch, reduces strain accumulation, and enhances shell uniformity. Through systematic analysis, we elucidate the strain distribution profiles across different shell architectures and the corresponding defect types induced by strain. This approach enables the controlled growth of a thick ZnS shell, improving passivation and minimizing nonradiative recombination. As a result, the optimized QDs exhibit a narrow full width at half-maximum of 45 nm, a high photoluminescence quantum yield of ≥80%, and significantly enhanced photochemical stability. This work highlights the critical role of strain management in achieving high-performance InP QDs for practical applications.
Authors
- Junjie Hao (ORCID: https://orcid.org/0000-0002-1345-8761)
- Xiao Wei Sun (ORCID: https://orcid.org/0000-0002-2840-1880)
- Ronghuan Liu (ORCID: https://orcid.org/0009-0008-4241-1656)
- Xijian Duan
- Lars Samuelson (ORCID: https://orcid.org/0000-0003-1971-9894)
- Lei Jin (ORCID: https://orcid.org/0000-0002-4369-7325)
- Wenda Zhang (ORCID: https://orcid.org/0000-0002-6713-6303)
- Bing Xu (ORCID: https://orcid.org/0000-0003-3103-6017)
Institutions
- Zhejiang Wanli University (CN)
- Lund University (SE)
- Hainan University (CN)
- Center for NanoScience (DE)
- Southern University of Science and Technology (CN)
- Integrated Optoelectronics (Norway) (NO)
- Applied Photonics (United Kingdom) (GB)
- Digital Science (United States) (US)
- Shenzhen Planck Innovation (China) (CN)
- Shenzhen Technology University (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-08-29
- DOI
- https://doi.org/10.1021/acs.nanolett.5c03042
- Citations
- 3
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.74
Funders
- Natural Science Foundation of Shenzhen City
- Science and Technology Foundation of Shenzhen City
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Hainan Province
- Development and Reform Commission of Shenzhen Municipality
- Southern University of Science and Technology
- National Key Research and Development Program of China