Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.
Authors
- Jingang Li (ORCID: https://orcid.org/0000-0002-8581-5115)
- Yuanlei Zhang (ORCID: https://orcid.org/0000-0003-4560-6092)
- Yinchao Zhao
- Tianyu Zhao (ORCID: https://orcid.org/0000-0003-0356-1244)
- Harm van Zalinge (ORCID: https://orcid.org/0000-0003-0996-1281)
- Sen Huang (ORCID: https://orcid.org/0000-0002-5980-3161)
- Kain Lu Low (ORCID: https://orcid.org/0000-0002-3999-7261)
- Ivona Z. Mitrović (ORCID: https://orcid.org/0000-0003-4816-8905)
- Zhiwei Sun (ORCID: https://orcid.org/0000-0002-2455-8696)
- Wen Liu (ORCID: https://orcid.org/0000-0002-2212-1861)
- Jie Zhang (ORCID: https://orcid.org/0000-0002-2734-0115)
- Weisheng Wang (ORCID: https://orcid.org/0000-0002-4289-4079)
- Hao Tian
- Maoqing Ling (ORCID: https://orcid.org/0009-0009-2445-4959)
Institutions
- University of Liverpool (GB)
- Institute of High Energy Physics (AT)
- Xi’an Jiaotong-Liverpool University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-08-25
- DOI
- https://doi.org/10.1063/5.0281033
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China