Strong Efficiency Enhancement of GaAs Solar cells with Quantum Dot Photoresist

In this study, a colloidal quantum dot contained photoresist layer was used to increase the spectral management of a GaAs solar cell via the luminescent downshift effect. The novel geometry of the device mesa can be used to accommodate more of this color conversion materials. As high as a 60% increase in the power conversion efficiency can be found, while the electrical properties, such as the reverse leakage currents, was not affected by this addition.