Unlocking High Efficiency in (Ag,Cu)(In,Ga)Se₂ Solar Cells: A Parametric Study on Silver Alloying

The partial substitution of copper (Cu) with silver (Ag) in Cu(In,Ga)Se₂ (CIGS) thin-film solar cells represents a transformative approach to improving absorber layer properties and boosting device efficiency. This study will examine and discuss the effect of Ag alloying (0 < Ag/(Ag+Cu) < 0.3) via thermal evaporation, combined with rubidium fluoride (RbF) post-deposition treatment, on samples with bandgaps ranging from 1.1 to 1.5 eV. The approach significantly affects gallium grading, grain size, open-circuit voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf>), and fill factor (FF), achieving a power conversion efficiency (PCE) up to 20.4% for a ACIGS absorber with a 1.2 eV bandgap.

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Publication Details

Published
2025-06-08
DOI
https://doi.org/10.1109/pvsc59419.2025.11133167
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73
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article

Unlocking High Efficiency in (Ag,Cu)(In,Ga)Se₂ Solar Cells: A Parametric Study on Silver Alloying

Vincent Dufoulon, Thomas Tom, Amelle Rebaï, Jackson Lontchi et al.
1 citations
Chalcogenide Semiconductor Thin Films
0.73
article

Unlocking High Efficiency in (Ag,Cu)(In,Ga)Se₂ Solar Cells: A Parametric Study on Silver Alloying

Vincent Dufoulon, Thomas Tom, Amelle Rebaï, Jackson Lontchi, Jean‐François Guillemoles, Stéfania Cacovich, Negar Naghavi, Tommaso Raimondi
article en
1 citations

Abstract

The partial substitution of copper (Cu) with silver (Ag) in Cu(In,Ga)Se₂ (CIGS) thin-film solar cells represents a transformative approach to improving absorber layer properties and boosting device efficiency. This study will examine and discuss the effect of Ag alloying (0 < Ag/(Ag+Cu) < 0.3) via thermal evaporation, combined with rubidium fluoride (RbF) post-deposition treatment, on samples with bandgaps ranging from 1.1 to 1.5 eV. The approach significantly affects gallium grading, grain size, open-circuit voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf>), and fill factor (FF), achieving a power conversion efficiency (PCE) up to 20.4% for a ACIGS absorber with a 1.2 eV bandgap.

Centre National de la Recherche Scientifique (FR), École Polytechnique (FR)
Affordable and clean energy
Openalex Percentile: Top 24%
Chalcogenide Semiconductor Thin Films
0.73
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