Performance of Sub-micron CuBi₂O₄ Solar Cell With Graphene Oxide Hole Transport Material

CuBi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> (CBO) has recently emerged as a promising photovoltaic material. In this work, we have investigated the performance of a new heterojunction solar cell structure with graphene oxide (GO) as the hole transport material (HTM) through numerical modeling and simulation. Our proposed Au/GO/CBO/CdS/ZnO/ITO/Al device configuration achieved ~23% efficiency using only 600 nanometer thick CBO photo-absorber film. Thickness of the absorber layer and the defect density in the CBO film were varied to analyze their dependence on the device performance. The optimized cell exhibited an open-circuit voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf>) of 1.343 V, a short-circuit current density (J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf>) of 22.32 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, 77.54% fill factor (FF), and 23.24% power conversion efficiency (PCE).