CZTSSe thin film solar cell from highly stable precursor solution

CZTSSe absorber layer is a well explored material for a decade in the field of thin film solar cells. The defects during fabrication and V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> deficit in the device limit its efficiency below 15%. To enable large-scale production, low-cost, efficient, and stable CZTSSe devices must be developed. An optimized solution-processed approach has the potential to meet the requirements. In this approach, the stability of the precursor solution can also be one of the factors influencing the quality of the absorber and the device performance. Herein, an attempt is made to explore this connection, and a highly stable precursor solution based CZTSSe thin film solar cell is fabricated. Interestingly, an incredible stability was observed in the photovoltaic parameter V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> (399 mV to 384 mV) of the device even after 2 years of fabrication calling for further exploration on this aspect.