Back contact passivation with Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se<sub>2</sub> bifacial solar cells on In<sub>2</sub>O<sub>3</sub>:Sn back contact

This study investigates the effect of Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (ACIGS) bifacial solar cells on In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>:Sn (ITO) transparent substrates. It is found that the performance of cells on ITO equals or supersedes the performance of reference cells made on Mo. Up to 60% bifaciality was found for the cells on ITO. At the ACIGS/ITO interface a layer of 3 nm GaO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> is identified with STEM and is believed to have a passivating effect on the back contact. An increase in the steepness of the Ga-grading results in better overall performance for front and rear side measurements, which likely indicates an added rear-contact passivation effect.

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Published
2025-06-08
DOI
https://doi.org/10.1109/pvsc59419.2025.11133411
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
Field-Weighted Citation Impact
0.73
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article

Back contact passivation with Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se2 bifacial solar cells on In2O3:Sn back contact

Klara Kiselman, Patrick Pearson, Marika Edoff, Olivier Donzel‐Gargand et al.
1 citations
Chalcogenide Semiconductor Thin Films
0.73
article

Back contact passivation with Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se2 bifacial solar cells on In2O3:Sn back contact

Klara Kiselman, Patrick Pearson, Marika Edoff, Olivier Donzel‐Gargand, André Violas, Pedro M. P. Salomé, Lars Stolt, E. P. Yakovleva
article en
1 citations

Abstract

This study investigates the effect of Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (ACIGS) bifacial solar cells on In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>:Sn (ITO) transparent substrates. It is found that the performance of cells on ITO equals or supersedes the performance of reference cells made on Mo. Up to 60% bifaciality was found for the cells on ITO. At the ACIGS/ITO interface a layer of 3 nm GaO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> is identified with STEM and is believed to have a passivating effect on the back contact. An increase in the steepness of the Ga-grading results in better overall performance for front and rear side measurements, which likely indicates an added rear-contact passivation effect.

Uppsala University (SE), International Iberian Nanotechnology Laboratory (PT)
Affordable and clean energy
Openalex Percentile: Top 24%
Chalcogenide Semiconductor Thin Films
0.73
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