Connecting recombination rates with carrier density via quasi-steady-state and transient photoluminescence in GaAs

The characterization of defects and their impact on recombination rates in solar cells is crucial for evaluating and improving photovoltaic performance. Injection-dependent transient photoluminescence (PL) spectroscopy is a sensitive and commonly used technique for investigating recombination rates in semiconductors. However, determination of the photoexcited carrier density during the lifetime experiment and making comparisons with steady-state measurements can be challenging. We employ a new dynamic calibration approach, which relies on a combination of quasi-steady state and transient PL measurements, to obtain the lifetime as a function of charge carrier density in a GaAs/GaInP heterostructure. We find that detection constraints limit the utility of the experiment in its current configuration.