Automation Methodology for Complete Electro-Thermal Simulation of a DMOS Chip Model

Recent advancements in power MOSFET technology have brought forth devices characterized by low specific on-resistance, high transconductance and rapid switching speeds. While these attributes facilitate applications with unprecedented power density, they also introduce challenges related to thermal instability. Addressing these challenges necessitates the utilization of electro-thermal simulation techniques, with Finite Element Analysis (FEA) playing a pivotal role. FEA enables precise modelling of temperature distribution and electrical behavior within the device structure. Iterative refinement of material properties ensures convergence, providing valuable insights into thermal-electrical interactions and facilitating design optimization.