Oxide Formation on CdTe as a Back Surface Passivation Material
CdTe thin-film solar devices have a theoretical efficiency similar to that of Si; however, reaching this efficiency in practice proves to be challenging. One method of improving device efficiency would be passivating the back surface more effectively, reducing the recombination rate; using scanning transmission electron microscopy (STEM), we investigate both native TeO2 oxide formation and TeO2 deposited using pulsed laser deposition (PLD) on various CdTe absorber layers in order to understand how it may be used in such an interface.
Authors
- Yong‐Hang Zhang (ORCID: https://orcid.org/0000-0002-0485-1924)
- Xin Qi (ORCID: https://orcid.org/0000-0002-8145-0681)
- Robert F. Klie (ORCID: https://orcid.org/0000-0003-4773-6667)
- Arashdeep Singh Thind (ORCID: https://orcid.org/0000-0003-0262-766X)
- Anthony P. Nicholson (ORCID: https://orcid.org/0000-0003-0272-2771)
- Zheng Ju (ORCID: https://orcid.org/0009-0000-3669-4268)
- Amit Munshi (ORCID: https://orcid.org/0000-0002-9949-9600)
- Noah Kamm
- D. Bruce Buchholz (ORCID: https://orcid.org/0009-0004-2747-1897)
Institutions
- University of Illinois Chicago (US)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.1109/pvsc59419.2025.11132694
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00