Bilayer SnO<sub>2</sub>/ZnO Buffer Layers to Achieve 21.7% Efficient CdSeTe/CdTe Solar Cells

The use of SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> buffer layers has led to highly efficient and stable thin film CdSeTe/CdTe solar cells. However, chlorine segregation was observed at the SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /CdSeTe interface, suggesting that the quality of the p-n junction could be improved. In this work, ZnO was incorporated between the SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and CdSeTe to study its passivation effect. Including a ~10 nm thick ZnO layer improved conversion efficiency, V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf>, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf>, and FF, suggesting an improvement in junction quality. The bilayer SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (70 nm)/ZnO (30 nm) buffer layer achieved an efficiency of 21.7% without an anti-reflection coating. High-resolution TEM analysis showed atomically coherent boundaries at the SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/ZnO and ZnO/CdSeTe interfaces, indicating that ZnO creates a high-quality interface. The discovery that ZnO can be used as a passivation layer opens up new pathways to achieve highly efficient solar cells.

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Published
2025-06-08
DOI
https://doi.org/10.1109/pvsc59419.2025.11133075
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Bilayer SnO2/ZnO Buffer Layers to Achieve 21.7% Efficient CdSeTe/CdTe Solar Cells

D.A. Lamb, Timothy Nagle, John M. Walls, Stuart Robertson et al.
1 links
Chalcogenide Semiconductor Thin Films
article

Bilayer SnO2/ZnO Buffer Layers to Achieve 21.7% Efficient CdSeTe/CdTe Solar Cells

D.A. Lamb, Timothy Nagle, John M. Walls, Stuart Robertson, Zhaoxia Zhou, Mustafa Togay, Luis C. Infante‐Ortega, Luksa Kujovic, Jake W. Bowers, S.J.C. Irvine, Gang Xiong, Xiaolei Liu, Wei Zhang, Chungho Lee, Dingyuan Lu, Ciaran Llewelyn
article en

Abstract

The use of SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> buffer layers has led to highly efficient and stable thin film CdSeTe/CdTe solar cells. However, chlorine segregation was observed at the SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /CdSeTe interface, suggesting that the quality of the p-n junction could be improved. In this work, ZnO was incorporated between the SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and CdSeTe to study its passivation effect. Including a ~10 nm thick ZnO layer improved conversion efficiency, V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf>, J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf>, and FF, suggesting an improvement in junction quality. The bilayer SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (70 nm)/ZnO (30 nm) buffer layer achieved an efficiency of 21.7% without an anti-reflection coating. High-resolution TEM analysis showed atomically coherent boundaries at the SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/ZnO and ZnO/CdSeTe interfaces, indicating that ZnO creates a high-quality interface. The discovery that ZnO can be used as a passivation layer opens up new pathways to achieve highly efficient solar cells.

Loughborough University (GB), Swansea University (GB), First Solar (United States) (US)
Affordable and clean energy
Openalex Percentile: Top 78%
Chalcogenide Semiconductor Thin Films
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