The Effect of Grain Boundary Misorientation Angle on Selenium Diffusion in CdSe<sub>x</sub>Te<sub>1-x</sub> Solar Cells
The effect of grain boundary (GB) misorientation on selenium (Se) diffusion and bandgap grading in cadmium telluride (CdTe) devices incorporating a CdSexTe1-x alloy has been investigated using high-resolution cathodoluminescence (CL) and electron backscatter diffraction (EBSD). Using CL, we map the bandgap variations and the Selenium concentration across the absorber. EBSD provides corresponding information on grain boundary orientation from the same cross-section of the device. This correlative analysis reveals that larger grain boundary misorientation angles promote greater Se diffusion, resulting in a lower bandgap (BG) in grains associated with this type of grain boundary.
Authors
- Sam Machin
- John M. Walls (ORCID: https://orcid.org/0000-0003-4868-2621)
- Stuart Robertson (ORCID: https://orcid.org/0000-0001-5591-369X)
- Zhaoxia Zhou (ORCID: https://orcid.org/0000-0002-7420-0510)
- Eric Colegrove (ORCID: https://orcid.org/0000-0002-3811-2193)
- Matthew O. Reese (ORCID: https://orcid.org/0000-0001-9927-5984)
- Joshua Brown (ORCID: https://orcid.org/0009-0007-2142-7053)
- Kieran M. Curson (ORCID: https://orcid.org/0009-0000-6054-3451)
- Xiaolei Liu (ORCID: https://orcid.org/0009-0009-8788-3208)
- Robert L. Morrissey
Institutions
- National Laboratory of the Rockies (US)
- Loughborough University (GB)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.1109/pvsc59419.2025.11132498
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00