Incorporation of Phosphorus inot CdTe Devices Using Hot Wire Cracked Phosphine Gas

Increasing the acceptor concentration of CdTe solar cells is believed to be critical to achieving high efficiency devices. Substitution of a group V element on a Te site is one way to do this and of great interest. Here we incorporate P into CdTe device stacks by evaporating CdTe in the presence of phosphine gas. We show that cracking the gas with a hot wire is critical to P incorporation and that the geometry of the hot wire greatly affects the fraction of the gas cracked. Films with P concentrations of 1017 cm−3 were fabricated. This concentration should provide enough P to achieve a measurable carrier concentration once the films are processed. As a result, we are now turning our attention to processing and fabricating devices using films grown using this method. Results of these devices will also be presented.

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Published
2025-06-08
DOI
https://doi.org/10.1109/pvsc59419.2025.11133242
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Incorporation of Phosphorus inot CdTe Devices Using Hot Wire Cracked Phosphine Gas

Michael J. Heben, Manoj K. Jamarkattel, Krishna Prasad Lamichhane, Adam B. Phillips et al.
Chalcogenide Semiconductor Thin Films
article

Incorporation of Phosphorus inot CdTe Devices Using Hot Wire Cracked Phosphine Gas

Michael J. Heben, Manoj K. Jamarkattel, Krishna Prasad Lamichhane, Adam B. Phillips, Luis C. Infante‐Ortega, Prabodika N. Kaluarachchi, Abasi Abudulimu, Thomas Fiducia, Kara Buehrer Kile, Nikolas J. Podraza, Randy J. Ellingson, Zulkifl Hussain, Ebin Bastola, Yanfa Yan, Ambalanath Shan, Adbul Quader
article en

Abstract

Increasing the acceptor concentration of CdTe solar cells is believed to be critical to achieving high efficiency devices. Substitution of a group V element on a Te site is one way to do this and of great interest. Here we incorporate P into CdTe device stacks by evaporating CdTe in the presence of phosphine gas. We show that cracking the gas with a hot wire is critical to P incorporation and that the geometry of the hot wire greatly affects the fraction of the gas cracked. Films with P concentrations of 1017 cm−3 were fabricated. This concentration should provide enough P to achieve a measurable carrier concentration once the films are processed. As a result, we are now turning our attention to processing and fabricating devices using films grown using this method. Results of these devices will also be presented.

University of Toledo (US)
Clean water and sanitation
Openalex Percentile: Top 78%
Chalcogenide Semiconductor Thin Films
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Incorporation of Phosphorus inot CdTe Devices Using Hot Wire Cracked Phosphine Gas — Michael J. Heben, Manoj K. Jamarkattel, et al. · (2025) | TGRS Research Map | TGRS