Strategic interfacial layers for enhanced charge transport in Sb2Se3 solar cells

This study demonstrates the enhancement of charge transport properties in Sb2Se3 solar cells through the introduction of interfacial interlayers. MoSe2 and SnOx were selected and optimized as an interlayer for back and front interface, respectively. The improved ohmic contact quality at the back interface was revealed, along with the preferential growth of Sb2Se3, leading to the reduction of carrier recombination. The effect of SnOx on interfacial carrier extraction between the absorber and buffer layer was discussed with the changes in surface potential distribution and energy band structure of CdS buffer layer. With both interlayers, the best cell achieved 6.247% PCE, recording the highest performance for co-evaporation processed Sb2Se3 solar cells and highlighting the importance of interface engineering in device optimization.