Large Area SiGe Layers via Screen-Printing and Aluminum-Induced Crystallization for III-V/Si Tandem Solar Cell Applications

This study explores the screen-printing of high-quality silicon-germanium (SiGe) layers for III-V/Si tandem photovoltaic applications. By utilizing aluminum-induced liquid-phase epitaxy with Al-Ge mixed paste, we aim to address the lattice mismatch between silicon and III-V materials, which is a significant hurdle in integrating inexpensive Si substrates with complex III-V multi-junction solar cells. Our method offers advantages such as simplicity, low cost, and rapid processing times. The results demonstrate the effects of pre-oxidation parameters, temperature cooling rates, and Ge contents in the paste on the growth and quality of SiGe layers. The study also evaluates the electric characteristics and crystal quality of the formed SiGe layers, highlighting their potential for high-efficiency solar cells and high-speed switching rectifiers.