13.4 % Efficiency with 0.6 μm Undoped CdSeTe Absorber

Se has been reported to improve carrier lifetime and luminescence in CdSexTe1-x/CdTe bi-layer absorbers. Without a CdTe layer, uniform bandgap CdSexTe1-x absorbers (CST-only) exhibited higher external radiative efficiency (ERE) and carrier lifetimes compared to bi-layer absorbers. However, this did not translate into device performance. This has been attributed to poor hole mobility in the CST-only absorber due to the presence of traps. In this study, various thickness of CST-only absorbers were grown and characterized. The findings suggest that trapping effects are mitigated in the presence of an in-built electric field. Improvement in PCE from