Defect engineering in Sb<sub>2</sub>Se<sub>3</sub> via post-growth thermal treatments: a photoluminescence study
Sb2Se3 is an emerging inorganic quasi-one-dimensional (Q1D) semiconductor absorber material for sustainable thin film photovoltaics. The efficiency of Sb2Se3 solar cells is mainly limited by the strong recombination of light-induced charge carriers resulting in low open circuit voltage of the devices. A route to suppress the formation of harmful deep defects in Sb2Se3 limiting the carrier lifetime, mobility and concentration via post-growth thermal treatment is presented in this study. The defects in the as-grown and post-growth heat-treated Sb2Se3 polycrystals are investigated by detailed photoluminescence spectroscopy.
Authors
- Maarja Grossberg-Kuusk
- Valdek Mikli (ORCID: https://orcid.org/0000-0002-2406-3562)
- İdil Mengü (ORCID: https://orcid.org/0000-0003-0011-1838)
- Kristi Timmo (ORCID: https://orcid.org/0000-0001-6054-6783)
- J. Krustok (ORCID: https://orcid.org/0000-0002-4671-2332)
- Nafiseh Abbasi
- Reelika Kaupmees (ORCID: https://orcid.org/0000-0002-1766-4837)
- Marit Kauk‐Kuusik (ORCID: https://orcid.org/0000-0003-0071-8568)
Institutions
- Tallinn University of Technology (EE)
Publication Details
- Published
- 2025-06-08
- DOI
- https://doi.org/10.1109/pvsc59419.2025.11132953
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00