Alternative p-type metal oxide films as hole transport materials for photovoltaic devices

In this work, we present the study of inorganic p- type metal oxide films for use as charge transport materials in photovoltaic cells. Potential use of Molybdenum oxide (MoO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>) and Nickel oxide (NiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>) as hole transport materials (HTM) was explored using SCAPS-1D simulation software. The films were deposited by room temperature reactive evaporation of Mo, and Ni metal, respectively in an oxygen environment. The films were nominally 100 nm thick and were amorphous. They were annealed at 200°C to improve crystallinity and were characterized for electrical, optical and morphological properties.