The effect of thickness on the Sb<sub>2</sub>Se<sub>3</sub> superstrate solar cells

In this study, we analyze the impact of different thickness of antimony selenide thin films on the electrical properties of the absorber and on the efficiency of the finished solar cells. Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>Se<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> absorbers have been deposited with different thickness: from 400 nm to 1200 nm, grown by thermal evaporation on CdSe buffer layer in superstrate configuration. The highest efficiency has been delivered by the thinner absorber, with a large absorption spectrum, a higher quantum efficiency response, and a higher carrier concentration. Moreover, a post-annealing treatment in air at 150 °C, improves the efficiency of the cells with a larger impact on the thinnest absorber, increasing the Voc and correcting the rollover effect observed in the current voltage curve of the thicker absorber layers.

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Published
2025-06-08
DOI
https://doi.org/10.1109/pvsc59419.2025.11133078
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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The effect of thickness on the Sb2Se3 superstrate solar cells

Muḥammad Mukhtār, José‐Maria Delgado‐Sánchez, Elisa Artegiani, Alessandro Romeo et al.
5 links
Chalcogenide Semiconductor Thin Films
article

The effect of thickness on the Sb2Se3 superstrate solar cells

Muḥammad Mukhtār, José‐Maria Delgado‐Sánchez, Elisa Artegiani, Alessandro Romeo, Matteo Meneghini, Narges Torabi, Paula Jakuza
article en

Abstract

In this study, we analyze the impact of different thickness of antimony selenide thin films on the electrical properties of the absorber and on the efficiency of the finished solar cells. Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>Se<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> absorbers have been deposited with different thickness: from 400 nm to 1200 nm, grown by thermal evaporation on CdSe buffer layer in superstrate configuration. The highest efficiency has been delivered by the thinner absorber, with a large absorption spectrum, a higher quantum efficiency response, and a higher carrier concentration. Moreover, a post-annealing treatment in air at 150 °C, improves the efficiency of the cells with a larger impact on the thinnest absorber, increasing the Voc and correcting the rollover effect observed in the current voltage curve of the thicker absorber layers.

University of Verona (IT), University of Padua (IT), Universidad de Sevilla (ES)
Openalex Percentile: Top 78%
Chalcogenide Semiconductor Thin Films
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