Sources of Harmful Radiation for Semiconductors and Impacts of Irradiating Particles and Temperature on the Photocurrent Density and on the Photovoltage of an N⁺-P-N⁺ Type Silicon Solar Cell in Frequency Regime Under Polychromat

In this work, we study the sources of harmful radiation for semiconductors and the effects of irradiating particles and temperature on an n<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> − p − n<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> type silicon solar cell.We have analysed the responses of photocurrent density and photovoltage as a function of frequency for different irradiation energy flow ϕp, different damage coefficients kI and different temperatures T in the range 298 − 353K (knowing that test standard solar cell conditions are solar cell radiation is equal to 1kW.m<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> and temperature usually 25°C).From the analysis, we can say that the temperature has a strong impact on the photovoltage and that the irradiation has a greater influence on the photocurrent density. These results reveal a dual effect on the electrical parameters studied. On one hand, the increase in irradiating particles leads to the formation of crystalline defects, thus reducing the mobility and lifetime of minority charge carriers. A higher damage coefficient reflects a greater probability of defect creation, resulting in more severe degradation. The high number of particle-matter interactions affects the carrier density, decreasing the number of minority carriers stored on either side of the junction. This leads to a widening of the space charge region, which explains the observed voltage drop.On the other hand, irradiation energy reduces the mobility of carriers at the junction and increases their concentration, resulting in a decrease in photocurrent density. Finally, increasing temperature promote recombination rates and disturbs the internal electric field, further reducing the electrical performance of the cell.As a research perspectives, we may in the future consider a study on the development of encapsulation techniques to mitigate the observed degradation effects and to operate under optimal temperature conditions.